shape: | Flat |
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Conductive Type: | Bipolar Integrated Circuit |
Integration: | MSI |
Technics: | Semiconductor IC |
Application: | Standard Generalized Integrated Circuit |
Type: | Digital / Analog IC |
Samples: |
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Customization: |
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Package | PinsHVSSOP (DGN) | 8 |
Operating temperature range (°C)-40 to 125 |
Package qty | Carrier250 | SMALL T&R |
The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
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