Ti Tlv2313qdgkrq1 Operational Amplifier Electronic Components Integrated Circuit IC

• Conductive Type: Bipolar Integrated Circuit
• Integration: MSI
• Technics: Semiconductor IC
• Package/Pins: Vssop (Dgk) 8
• Rating: Automotive
• RoHS: Yes
• Model NO.: TLV2313QDGKRQ1
• Reach: Yes
• Operating Temperature Range (°c): -40 to 125
• shape: Flat
• Transport Package: 2, 500 Large T&R
• Specification: 14.7 mm² 3 x 4.9
• Trademark: TI
• HS Code: 8542399000
• Production Capacity: 60000

Product Description

Quality information

RatingAutomotive

RoHSYes

REACHYes

Lead finish / Ball materialNIPDAUAG

MSL rating / Peak reflowLevel-2-260C-1 YEAR

 

Packaging information

Package | PinsVSSOP (DGK) | 8

Operating temperature range (°C)-40 to 125

Package qty | Carrier2,500 | LARGE T&R

 

Features for the TLV2313-Q1

• Qualified for Automotive Applications
• AEC-Q100 Qualified With the Following Results
  • Device Temperature Grade 1: -40°C to +125°C
    Ambient Operating Temperature Range
  • Device HBM ESD Classification Level 3A
  • Device CDM ESD Classification Level C6
• Precision Amplifier for Cost-Sensitive Systems
• Low I_Q: 65 µA/ch
• Wide Supply Range: 1.8 V to 5.5 V
• Low Noise: 26 nV/√Hz at 1 kHz
• Gain Bandwidth: 1 MHz
• Rail-to-Rail Input/Output
• Low Input Bias Current: 1 pA
• Low Offset Voltage: 0.75 mV
• Unity-Gain Stable
• Internal RFI/EMI Filter

Description for the TLV2313-Q1

The TLVx313-Q1 family of single- and dual-channel operational amplifiers combine low power consumption with good performance. This makes them designed for a wide range of applications, such as infotainment, engine control units, automotive lighting and more. The family features rail-to-rail input and output (RRIO) swings, low quiescent current (65 µA, typical), wide bandwidth (1 MHz) and very low noise (26 nV/√Hz at 1 kHz), making them attractive for a variety of battery-powered applications that require a good balance between cost and performance. Further, low-input-bias current enables these devices to be used in applications with megaohm source impedances.

The robust design of the TLVx313-Q1 devices provides ease-of-use to the circuit designer: unity-gain stability with capacitive loads of up to 100 pF, integrated RFI/EMI rejection filter, no phase reversal in overdrive conditions, and high electrostatic discharge (ESD) protection (4-kV HBM).

The devices are optimized for operation at voltages as low as 1.8 V (±0.9 V) and up to 5.5 V (±2.75 V), and are specified over the extended temperature range of -40°C to +125°C.

The single-channel TLV313-Q1 device is available in an SC70-5 package.The dual-channel TLV2313-Q1 device is offered in SOIC-8 (D) and VSSOP-8 (DGK) packages.